| 摘要 |
PROBLEM TO BE SOLVED: To improve yield by stably separating a pair of adjacent capacitive contact plugs and to suppress the occurrence of junction leakage.SOLUTION: A method of manufacturing a semiconductor device comprises the steps of: forming element isolation regions (STI) 12a and 12b in a semiconductor substrate 11; forming word lines WL10a to WL10d in active regions 13a and 13b surrounded by the element isolation regions 12a and 12b; forming capacitive contact regions 27a to 27d between the element isolation regions 12a and 12b and the word lines WL10a to WL10d; forming, by etching, capacitive contact holes in the capacitive contact regions 27a to 27d using a plurality kinds of capacitive contact masks 29a to 29c, 31a, and 31b; forming capacitive contact plugs 27e to 27h in the capacitive contact holes; and forming a capacitor on the capacitive contact plugs 27e to 27h. |
