发明名称 |
THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A thin film transistor substrate includes a substrate; a gate electrode on the substrate; a semiconductor pattern on the gate electrode; a source electrode on the semiconductor pattern; a drain electrode on the semiconductor pattern and spaced apart from the source electrode; a pixel electrode connected to the drain electrode; and a common electrode partially overlapped with the pixel electrode. The semiconductor pattern is in a same layer of the thin film transistor substrate as the pixel electrode and has an electrical property different from an electrical property of the pixel electrode.
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申请公布号 |
US2013228772(A1) |
申请公布日期 |
2013.09.05 |
申请号 |
US201213710889 |
申请日期 |
2012.12.11 |
申请人 |
SAMSUNG DISPLAY CO., LTD;SAMSUNG DISPLAY CO., LTD. |
发明人 |
CHOI YOUNGJOO;KO GWANG-BUM;RYU GWONHEON;KIM JOONGEOL;KIM DO-HYUN;MOH SANG-MOON;LEE WOOGEUN;LEE WONHEE |
分类号 |
H01L29/786;H01L29/66 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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