发明名称 THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
摘要 A thin film transistor substrate includes a substrate; a gate electrode on the substrate; a semiconductor pattern on the gate electrode; a source electrode on the semiconductor pattern; a drain electrode on the semiconductor pattern and spaced apart from the source electrode; a pixel electrode connected to the drain electrode; and a common electrode partially overlapped with the pixel electrode. The semiconductor pattern is in a same layer of the thin film transistor substrate as the pixel electrode and has an electrical property different from an electrical property of the pixel electrode.
申请公布号 US2013228772(A1) 申请公布日期 2013.09.05
申请号 US201213710889 申请日期 2012.12.11
申请人 SAMSUNG DISPLAY CO., LTD;SAMSUNG DISPLAY CO., LTD. 发明人 CHOI YOUNGJOO;KO GWANG-BUM;RYU GWONHEON;KIM JOONGEOL;KIM DO-HYUN;MOH SANG-MOON;LEE WOOGEUN;LEE WONHEE
分类号 H01L29/786;H01L29/66 主分类号 H01L29/786
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