| 摘要 |
A fin field effect transistor (Fin FET) and a method for forming the Fin FET are provided. In an exemplary method, the Fin FET can be formed by providing a dielectric layer on a semiconductor substrate. The dielectric layer and the semiconductor substrate can be etched to form a groove including a second sub-groove, formed through the dielectric layer, and a first sub-groove, formed in the semiconductor substrate and connected to the second sub-groove. A fin can then be formed in the groove. The fin can have a top surface higher than a top surface of the dielectric layer. A gate structure can then be formed at least partially around a length portion of the fin on the top surface of the dielectric layer.
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