| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing reactor apparatus for processing a semiconductor substrate.SOLUTION: The apparatus includes a chamber. The apparatus further includes a top electrode 204 configured to be coupled to a first RF power source 206 having a first RF frequency and a bottom electrode configured to be coupled to a second RF power source 212 having a second RF frequency lower than the first RF frequency. The apparatus additionally includes an insulating shroud 220 that lines an interior wall 202 of the chamber, the insulating shroud 220 being configured to be electrically floated during the processing. The apparatus further includes a perforated plasma confinement ring 222 disposed outside of an outer periphery of the bottom electrode 210, a top surface of the perforated plasma confinement ring being disposed below a top surface of a substrate 214 and electrically grounded during the processing. |
