发明名称 |
COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A COMPOUND SEMICONDUCTOR |
摘要 |
According to the present invention, a method for manufacturing a compound semiconductor comprises: forming a graphene-derived material layer on either a first selected substrate or a first selected compound semiconductor layer; forming a second compound semiconductor layer of at least one layer on at least said graphene-derived material layer, and changing the graphene-derived material layer so as to separate said second compound semiconductor layer of at least one layer. |
申请公布号 |
EP2634825(A2) |
申请公布日期 |
2013.09.04 |
申请号 |
EP20110836609 |
申请日期 |
2011.10.26 |
申请人 |
LG SILTRON INC.;KUMOH NATIONAL INSTITUTE OF TECHNOLOGY INDUSTRY-ACADEMIC COOPERATION FOUNDATION |
发明人 |
AN, SUNG JIN;LEE, DONG GUN;KIM, SEOK HAN |
分类号 |
H01L33/12;H01L33/00 |
主分类号 |
H01L33/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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