发明名称 |
Method for manufacturing a photomask, and dry etching method |
摘要 |
A photomask is manufactured by providing a photomask blank comprising a transparent substrate, a phase shift film, and a light-shielding film, the phase shift film and the light-shielding film including silicon base material layers, a N+O content in the silicon base material layer of the phase shift film differing from that of the light-shielding film, and chlorine dry etching the blank with oxygen-containing chlorine gas in a selected O/Cl ratio for selectively etching away the silicon base material layer of the light-shielding film. |
申请公布号 |
EP2209048(B1) |
申请公布日期 |
2013.09.04 |
申请号 |
EP20100000280 |
申请日期 |
2010.01.13 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
IGARASHI, SHINICHI;KANEKO, HIDEO;INAZUKI, YUKIO;NISHIKAWA, KAZUHIRO |
分类号 |
G03F1/80;G03F1/00;G03F1/32 |
主分类号 |
G03F1/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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