| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a patterning method of a chromium film which does not include wet etching treatment process and does not need an exclusive treatment equipment for chlorine gas and enables treatment in an inexpensive device configuration. <P>SOLUTION: The patterning method is constituted so as to have: a chromium film formation process of forming a chromium film 11' on a base 10; a mask material film formation process of forming a mask material film 12', which is not removed on oxygen plasma condition in the following patterning process, on the chromium film 11'; a mask pattern formation process of forming a predetermined mask pattern 12 by patterning the mask material film 12'; a patterning process of heating a stage for film placement to a temperature range of oxygen plasma condition and exposing a part of the chromium film, in which the mask pattern 12 is not formed, to oxygen plasma which does not contain chlorine atom for sublimating and removing it as a chrome oxide. Thereby, a predetermined chromium pattern 11 is obtained. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT</p> |
