| 摘要 |
<p>A protection module (4) for a RF-amplifier (2) is efficient against overvoltage due to load impedance mismatch when said RF-amplifier is connected to a load RF-element (3). The protection module comprises a branch with at least one diode-like operating component (D 1 , D 2 ,..., D n ) and a resistor (R 2 ) which starts conducting when a RF-signal on a transmission link (6) between the RF-amplifier and the load RF-element is higher than a threshold set by the diode-like operating component. Such protection may be implemented in MOS technology only.</p> |
