发明名称 |
Non-volatile memory device |
摘要 |
A non-volatile memory device includes a first sector including a first sector selection transistor and a first plurality of pages connected to the first sector selection transistor, and a second sector including a second sector selection transistor and a second plurality of pages connected to the second sector selection transistor. Each of the first and second plurality of pages includes a memory transistor and a selection transistor, and a number of pages in the first plurality of pages is greater than a number of pages in the second plurality of pages.
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申请公布号 |
US8526231(B2) |
申请公布日期 |
2013.09.03 |
申请号 |
US201113177873 |
申请日期 |
2011.07.07 |
申请人 |
LEE YONG-KYU;YU TEA-KWANG;SEO BO-YOUNG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE YONG-KYU;YU TEA-KWANG;SEO BO-YOUNG |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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