发明名称 Double-sided semiconductor structure and method for manufacturing same
摘要 A semiconductor structure including a substrate of semiconductor material of a first type of conductivity; a first semiconductor layer set in direct electrical contact with the substrate on a first side of the substrate; a second semiconductor layer set in direct electrical contact with the substrate on a second side of the substrate; a first active electronic device formed in the first semiconductor layer; and a second active electronic device formed in the second semiconductor layer.
申请公布号 US8525253(B2) 申请公布日期 2013.09.03
申请号 US20100913316 申请日期 2010.10.27
申请人 MICCICHE' MONICA;GRIMALDI ANTONIO GIUSEPPE;BAZZANO GAETANO;FRAZZETTO NICOLO;STMICROELECTRONICS S.R.L. 发明人 MICCICHE' MONICA;GRIMALDI ANTONIO GIUSEPPE;BAZZANO GAETANO;FRAZZETTO NICOLO
分类号 H01L29/78;H01L21/8238 主分类号 H01L29/78
代理机构 代理人
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