发明名称 |
Double-sided semiconductor structure and method for manufacturing same |
摘要 |
A semiconductor structure including a substrate of semiconductor material of a first type of conductivity; a first semiconductor layer set in direct electrical contact with the substrate on a first side of the substrate; a second semiconductor layer set in direct electrical contact with the substrate on a second side of the substrate; a first active electronic device formed in the first semiconductor layer; and a second active electronic device formed in the second semiconductor layer.
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申请公布号 |
US8525253(B2) |
申请公布日期 |
2013.09.03 |
申请号 |
US20100913316 |
申请日期 |
2010.10.27 |
申请人 |
MICCICHE' MONICA;GRIMALDI ANTONIO GIUSEPPE;BAZZANO GAETANO;FRAZZETTO NICOLO;STMICROELECTRONICS S.R.L. |
发明人 |
MICCICHE' MONICA;GRIMALDI ANTONIO GIUSEPPE;BAZZANO GAETANO;FRAZZETTO NICOLO |
分类号 |
H01L29/78;H01L21/8238 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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