| 摘要 |
PURPOSE: A non-volatile memory device, an erasing method thereof, and a memory system including the same improve performance characteristics by performing an erasure process by a word line. CONSTITUTION: Channel regions of cell transistors (M1-Mn) are precharged by applying a first voltage to multiple word lines (WL1-WLn). A second voltage lower than the first voltage is applied to the selected word line among the multiple word lines. A third voltage higher than the first voltage is applied to the unselected word line among the multiple word lines. The cell transistors connected to the selected word line are erased by applying the second voltage and the third voltage. |
