发明名称 Method and apparatus of halogen removal
摘要 A wafer is provided into an entrance load lock chamber. A vacuum is created in the entrance load lock chamber. The wafer is transported to a processing tool. The wafer is processed in a process chamber to provide a processed wafer, wherein the processing forms halogen residue. A degas step is provided in the process chamber after processing the wafer. The processed wafer is transferred into a degas chamber. The processed wafer is treated in the degas chamber with UV light and a flow of gas comprising at least one of ozone, oxygen, or H2O. The flow of gas is stopped. The UV light is stopped. The processed wafer is removed from the degas chamber.
申请公布号 US8525139(B2) 申请公布日期 2013.09.03
申请号 US20100908258 申请日期 2010.10.20
申请人 SINGH HARMEET;SANT SANKET;CHOU SHANG-I;VAHEDI VAHID;CASAES RAPHAEL;RAMACHANDRAN SEETHARAMAN;LAM RESEARCH CORPORATION 发明人 SINGH HARMEET;SANT SANKET;CHOU SHANG-I;VAHEDI VAHID;CASAES RAPHAEL;RAMACHANDRAN SEETHARAMAN
分类号 A61N5/06;C23F1/00;H01L21/26;H01L21/3065 主分类号 A61N5/06
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