发明名称 |
Method to connect a magnetic device to a CMOS transistor |
摘要 |
A CMOS device is provided in a substrate. A magnetic tunnel junction (MTJ) is provided over the CMOS device and connected to the CMOS device by a metal ring contact wherein a dielectric or other filling material forms the center of the metal ring contact and wherein a bottom of the metal ring contact underlying said filling material is metal.
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申请公布号 |
US8524511(B1) |
申请公布日期 |
2013.09.03 |
申请号 |
US201213571675 |
申请日期 |
2012.08.10 |
申请人 |
ZHONG TOM;LAM VINH;TENG ZHONGJIAN;HEADWAY TECHNOLOGIES, INC. |
发明人 |
ZHONG TOM;LAM VINH;TENG ZHONGJIAN |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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