发明名称 Method to connect a magnetic device to a CMOS transistor
摘要 A CMOS device is provided in a substrate. A magnetic tunnel junction (MTJ) is provided over the CMOS device and connected to the CMOS device by a metal ring contact wherein a dielectric or other filling material forms the center of the metal ring contact and wherein a bottom of the metal ring contact underlying said filling material is metal.
申请公布号 US8524511(B1) 申请公布日期 2013.09.03
申请号 US201213571675 申请日期 2012.08.10
申请人 ZHONG TOM;LAM VINH;TENG ZHONGJIAN;HEADWAY TECHNOLOGIES, INC. 发明人 ZHONG TOM;LAM VINH;TENG ZHONGJIAN
分类号 H01L21/00 主分类号 H01L21/00
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