| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern formation method adaptable to the miniaturization of patterns.SOLUTION: A pattern formation method includes: a step of forming a resist pattern 3 on a substrate; a step of forming, on the substrate, a coating film 4 covering the resist pattern 3 and having a predetermined thickness distribution; a step of exposing a top face of the resist pattern 3 by reducing the thickness of the coating film 4; and a step of forming a pattern on the substrate by processing the substrate with the use, as a mask, of a portion of the coating film (coating film pattern) 4 remained after removal of the resist pattern 3. Here, the predetermined thickness distribution is selected so as to cancel a thickness reduction distribution of the coating film 4 which is generated by reducing the thickness of the coating film 4. |
