| 摘要 |
PROBLEM TO BE SOLVED: To obtain a crystal having a large diameter and excellent quality, in crystal growth in which a nonpolar surface or a semipolar surface is used as a main surface.SOLUTION: In a method for producing a group 13 nitride crystal by growing a group 13 nitride semiconductor layer on a seed crystal in which the main surface is a nonpolar surface or a semipolar surface, and at least one surface of side surfaces is a semipolar surface, a crystal is grown so that the growth rate of the semipolar surface on the side surface becomes faster than the crystal growth rate of the main surface. |
