SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To suppress increase in voltage in comparison with a semiconductor device before mounting even after a semiconductor element is mounted on a sub-mount.SOLUTION: In a semiconductor device 20, a semiconductor element 1 is bonded to a sub-mount 13; the semiconductor element 1 includes a p-side electrode 5 and a p-type semiconductor region 3; the p-side electrode 5 is bonded to the sub-mount 13; and the p-side electrode 5 contacts the p-type semiconductor region 3. A quantity (atoms%) of Ga contained in the p-side electrode 5 in a region 5c of the p-side electrode 5, which is separated from a surface 3b of the p-type semiconductor region 3 by 5 nm and over is not more than 3×10times larger than a quantity (atoms%) of Ga contained in the p-type semiconductor region 3.