发明名称 HALL ELEMENT AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To improve element isolation performance by forming an element isolation film, and facilitate microfabrication by also reducing a level difference on a substrate.SOLUTION: In a hall element, relative misalignment between a well region and a contact region is eliminated. The hall element includes: a plurality of element isolation films 27 provided on a P-type substrate 21 at intervals; an N-type contact region 28 provided between the element isolation films 27 and in the P-type substrate; an interlayer insulation film 30 provided on the element isolation films 27; and wiring 32 provided on the N-type contact region 28 and in a contact hole provided in the interlayer insulation film 30.
申请公布号 JP2013171917(A) 申请公布日期 2013.09.02
申请号 JP20120033965 申请日期 2012.02.20
申请人 ASAHI KASEI ELECTRONICS CO LTD 发明人 GUNJI TOMOHIRO;KITAMURA TAKESHI
分类号 H01L43/06;H01L43/14 主分类号 H01L43/06
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