发明名称 |
HALL ELEMENT AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To improve element isolation performance by forming an element isolation film, and facilitate microfabrication by also reducing a level difference on a substrate.SOLUTION: In a hall element, relative misalignment between a well region and a contact region is eliminated. The hall element includes: a plurality of element isolation films 27 provided on a P-type substrate 21 at intervals; an N-type contact region 28 provided between the element isolation films 27 and in the P-type substrate; an interlayer insulation film 30 provided on the element isolation films 27; and wiring 32 provided on the N-type contact region 28 and in a contact hole provided in the interlayer insulation film 30. |
申请公布号 |
JP2013171917(A) |
申请公布日期 |
2013.09.02 |
申请号 |
JP20120033965 |
申请日期 |
2012.02.20 |
申请人 |
ASAHI KASEI ELECTRONICS CO LTD |
发明人 |
GUNJI TOMOHIRO;KITAMURA TAKESHI |
分类号 |
H01L43/06;H01L43/14 |
主分类号 |
H01L43/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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