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发明名称
半导体装置及其制造方法
摘要
于本发明之一实施例中,一半导体装置包含:P型基板上的光二极体、形成于该P型基板上的NPN电晶体、设置在NPN电晶体正下方并埋置于P型基板中的N+型埋入区、及形成于N+型埋入区中的P+型埋入区。
申请公布号
TWI407577
申请公布日期
2013.09.01
申请号
TW097127906
申请日期
2008.07.23
申请人
瑞萨电子股份有限公司 日本
发明人
三浦敏明
分类号
H01L31/10
主分类号
H01L31/10
代理机构
代理人
周良谋 新竹市东大路1段118号10楼;周良吉 新竹市东大路1段118号10楼
主权项
地址
日本
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