| 摘要 |
75COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, CONTAINING SILICON THAT BEARS DIKETONE-STRUCTURE-CONTAINING ORGANIC GROUP There is provided a composition for forming a lithographic resist underlayer 'film toform a resist underlayer film usable as a hard mask. A composition for forming a lithographic resist underlayer film, comprising, as a silane, a hydrolyzable organosila e, a 10 hydrolysate thereof, or a hydrolytic condensate thereof, wherein the silane includes a hydrolyzable organosilane of Formula (1) below:[ (R1) aSi (R2 ) (3—a)] b (R3 ) Formula (1)[where R is a group of Formula (2), (3), or (4): 15 (in Formulae (2), (3), and (4), at least one from among le, Rs, and R6 is a group bondedto a silicon atom directly or through a linking group.), RI is an alkyl group, an aryl group, an aralkyl group, an alkyl halide group, an aryl halide group, an aralkyl halide group an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, or a cyano group, or a20 combination thereof, le is an alkoxy group, an acyloxy group, or a halogen atomtNo Fig. |
