发明名称 WORKPIECE SUPPORT FOR A PLASMA REACTOR WITH CONTROLLED APPORTIONMENT OF RF POWER TO A PROCESS KIT RING
摘要 <p>In an electrostatic chuck, RF bias power is separately applied to a workpiece and to a process kit collar surrounding the workpiece. At least one variable impedance element governed by a system controller adjusts the apportionment of RF bias power between the workpiece and the process kit collar, allowing dynamic adjustment of the plasma sheath electric field at the extreme edge of the workpiece, for optimum electric field uniformity under varying plasma conditions, for example.FIGURE lA</p>
申请公布号 SG192540(A1) 申请公布日期 2013.08.30
申请号 SG20130055421 申请日期 2009.07.13
申请人 APPLIED MATERIALS, INC. 发明人 COLLINS, KENNETH, S.;BUCHBERGER, DOUGLAS, A., JR.;RAMASWAMY, KARTIK;RAUF, SHAHID;HANAWA, HIROJI;SUN, JENNIFER, Y.;NGUYEN, ANDREW;LILL, THORSTEN, B.;SHEN, MEIHUA
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