发明名称 |
LATERAL TRENCH TRANSISTOR, AS WELL AS A METHOD FOR ITS PRODUCTION |
摘要 |
A method for production of doped semiconductor regions in a semiconductor body of a lateral trench transistor includes forming a trench in the semiconductor body and introducing dopants into at least one area of the semiconductor body that is adjacent to the trench, by carrying out a process in which dopants enter the at least one area through inner walls of the trench.
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申请公布号 |
US2013224921(A1) |
申请公布日期 |
2013.08.29 |
申请号 |
US201313803291 |
申请日期 |
2013.03.14 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
HIRLER FRANZ;WAHL UWE;MEYER THORSTEN;RUEB MICHAEL;WILLMEROTH ARMIN;SCHMITT MARKUS;TOLKSDORF CAROLIN;SCHAEFFER CARSTEN |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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