PROCESS OF FORMING THROUGH-SILICON VIA STRUCTURE

摘要

In a process, an opening is formed to extend from a front surface of a semiconductor substrate through at least a part of the semiconductor substrate. A metal seed layer is formed on a sidewall of the opening. A metal silicide layer is formed on at least one portion of the metal seed layer. A metal layer is formed on the metal silicide layer and the metal seed layer to fill the opening.