发明名称 |
PENETRATING IMPLANT FOR FORMING A SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device and method to form a semiconductor device is described. The semiconductor includes a gate stack disposed on a substrate. Tip regions are disposed in the substrate on either side of the gate stack. Halo regions are disposed in the substrate adjacent the tip regions. A threshold voltage implant region is disposed in the substrate directly below the gate stack. The concentration of dopant impurity atoms of a particular conductivity type is approximately the same in both the threshold voltage implant region as in the halo regions. The method includes a dopant impurity implant technique having sufficient strength to penetrate a gate stack.
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申请公布号 |
US2013224926(A1) |
申请公布日期 |
2013.08.29 |
申请号 |
US201313857578 |
申请日期 |
2013.04.05 |
申请人 |
CURELLO GIUSEPPE;POST IAN R.;LINDERT NICK;HAFEZ WALID M.;JAN CHAI-HONG;BOHR MARK T. |
发明人 |
CURELLO GIUSEPPE;POST IAN R.;LINDERT NICK;HAFEZ WALID M.;JAN CHAI-HONG;BOHR MARK T. |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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