NONVOLATILE MEMORY DEVICE AND EMBEDDED MEMORY SYSTEM INCLUDING THE SAME

摘要

Integrated circuit memory devices include an array of nonvolatile memory cells having a plurality of pairs of nonvolatile memory cells therein. The plurality of pairs of nonvolatile memory cells include a first pair of nonvolatile memory cells, which share an erase gate electrode. Each of the nonvolatile memory cells in the first pair of nonvolatile memory cells includes a respective control gate electrode and the shared erase gate electrode extends between the control gate electrodes within the first pair of nonvolatile memory cells. Each of the first pair of nonvolatile memory cells may include a data storage transistor, which has a floating gate electrode therein, and a selection transistor. These transistors may be electrically connected in series and the shared erase gate electrode may extend between the floating gate electrodes.