| 摘要 |
Provided is a CMOS switch for use in RF switching having improved isolation properties. The CMOS switch includes a serial switching unit having first and second CMOS switches, a switching isolation unit for allowing an unselected output terminal of two output terminals to be electrically isolated from a common input terminal when the serial switching unit operates and an isolation enhancement unit. The isolation enhancement unit is connected in parallel to the first and the second CMOS switches between the two output terminals forming a parallel resonance circuit together with a parasitic capacitor of the serial switching unit. The CMOS switch for use in RF switching according to the present invention has a simple circuit structure and excellent operating properties at the MF or higher band. Also, the CMOS switch having high isolation properties is realized. |
