SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, PROTECTIVE ELEMENT, AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device includes: an epitaxial substrate formed by stacking a plurality of kinds of semiconductors over one semiconductor substrate by epitaxial growth; a field effect transistor of a first conductivity type formed in a first region; a field effect transistor of a second conductivity type formed in a second region; and a protective element formed in a third region. The protective element includes: a first stacking structure formed by etching the epitaxial substrate by vertical etching that proceeds in a stacking thickness direction; and a second stacking structure formed by etching the epitaxial substrate by vertical etching that proceeds in a stacking thickness direction. The protective element has two PN junctions on a current path formed between an upper end of the first stacking structure and an upper end of the second stacking structure via a base part of the first stacking structure and the second stacking structure.