Method for cleaning process chamber of chemical vapor deposition (CVD) reactor, involves removing susceptor from process chamber, and cleaning process chamber cover at specific temperature

摘要

The method involves forming parasitic coatings on a process chamber base (5) and a process chamber cover (3) by heating a susceptor (6) with a heating device (7) by performing CVD process. The introduction of etching gas consisting of chlorine, hydrochloric acid and hydrogen is performed in two purification processes. The process chamber base is cleaned at specific cleaning temperature. The susceptor is removed from a process chamber (4), and the process chamber cover is cleaned at other cleaning temperature.