| 摘要 |
<p>The present invention provides a lateral double-diffused metal oxide semiconductor field effect transistor (LDMOS), which belongs to the technical field of semiconductor power devices. The LDMOS comprises: a source region, a gate medium layer, a drain region, a drift region, a field oxide layer, a gate and a field region auxiliary electrode independently provided on the field oxide layer and used to increase a breakdown voltage of the LDMOS. The gate comprises a first part correspondingly provided on the gate medium layer and a second part extending from the first part onto a part of the field oxide layer. The length of the second part gate is reduced from a preset length value. If the length of the second part gate is set to be the preset length value, the breakdown voltage of the LDMOS can basically reach a maximum breakdown voltage value. The gate-drain capacitance Cgd of the LDMOS is small, the switching speed is high, also the breakdown voltage is high, and the direct current output characteristic is good.</p> |
