SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To enable formation of a structure for connecting a conductive pattern under a plurality of recesses and lower electrodes positioned at bottom faces of the plurality of recesses, respectively in an easy process.SOLUTION: A semiconductor device comprises: first lower electrodes continuously provided on an interlayer insulation film 424 located on bottom faces and lateral faces of a plurality of first recesses 104 and among the plurality of first recesses 104; a first capacitor insulating film 204 and a first upper electrode 206 which are provided along the interlayer insulation film 424 located on bottom faces and lateral faces of the plurality of first recesses 104 and among the plurality of first recesses 104; a conductive pattern 210 which is provided in a lower layer than the first capacitative element 200 and which overlaps the plurality of first recesses 104 in plan view; contacts 304 provided correspondingly to the plurality of first recesses 104 for connecting the first lower electrodes 202 located on the bottom faces of the first recesses 104 and the conductive pattern 210.