| 摘要 |
<p>PURPOSE: Chunk polycrystalline silicon with remarkably reduced carbon contamination on the surface and a method of washing the chunk polycrystalline silicon remarkably reduce the level of contamination caused by chunk polycrystalline silicon because this chunk polycrystalline silicon has the carbon concentration on the surface of 0.5-35 ppbw. CONSTITUTION: Chunk polycrystalline silicon has the carbon concentration on the surface of 0.5-35 ppbw. A method of washing the chunk polycrystalline silicon having carbon contamination on the surface comprises a steps of heat-treating the chunk polycrystalline silicon in a reactor at 350-600°C. The chunk polycrystalline silicon exists under the inner gas atmosphere while heat-treating. After finishing the heat-treatment, the chunk polycrystalline silicon has the carbon concentration on the surface of 0.5-35 ppbw.</p> |
