发明名称 Improvements in three-electrode semi-conductor device
摘要 674,283. Semi-conductor amplifiers. RADIO CORPORATION OF AMERICA. May 23, 1950 [May 31,1949], No. 12933/50. Class 40 (iv). [Also in Group XL (c)] A semi-conductor device comprises a block of semi-conductor with a wedge-shaped straight edge and having a low resistance contact, and two further electrodes each consisting of a metallic ribbon having a knifeedge at one end disposed at right angles to and in contact with the block edge. In Fig. 1, two ribbon-shaped phosphor bronze electrodes 15 and 16 have knifeedges which engage the edge of cube-shaped semi-conductor block 10 which is fixed to a brass support 12 which forms a base electrode. An insulating block 25 carries the support 12 and metal supports 22 and 23 which carry the electrodes 15 and 16. The distance between electrodes 15 and 16 may be small for use as a transistor in amplifying or oscillating circuits. The electrodes 15 and 16 may be separated by a thin layer of film of insulating material to maintain the desired spacing. The arrangement enables higher contact pressures to be used to reduce noise and improves heat dissipation.
申请公布号 GB674283(A) 申请公布日期 1952.06.18
申请号 GB19500012933 申请日期 1950.05.23
申请人 RADIO CORPORATION OF AMERICA 发明人
分类号 H01L23/31;H01L29/00 主分类号 H01L23/31
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