| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which short-circuit between copper wirings can be prevented. <P>SOLUTION: Cu wirings 24 protruding onto a third interlayer film 17 and the third interlayer film 17 are coated with a coating layer 31 made of PBO having characteristic of capturing Cu (Cu ion). Thus, Cu to be diffused from the Cu wiring 24 can be captured by the coating layer 31, and Cu in the coating layer 31 can be prevented from diffusing. Therefore, short-circuit between the Cu wirings 24 formed on the third interlayer film 17 can be prevented. <P>COPYRIGHT: (C)2008,JPO&INPIT |
