Methods of fabrication of high-density laser diode stacks
摘要
A method of fabricating a high-density laser diode stack is disclosed. The laser diode bars each have an emitter surface and opposing surfaces on either side of the emitter surface. Each laser diode bar has metallization layers on the opposing surfaces and a solder layer on at least one of the metallization layers. The solder layer is applied to a semiconductor wafer prior to cleaving the wafer to create the laser diode bars. The laser diode bars are arranged in a stack such that the emitter surfaces of the bars are facing the same direction. The stack of laser diode bars is placed in a vacuum chamber. An anti-reflection coating is deposited on the emitter surfaces of the laser diode bars in the chamber. The laser diode bars are joined by applying a temperature sufficient to reflow the solder layers in the chamber.
申请公布号
US8518814(B2)
申请公布日期
2013.08.27
申请号
US201113310432
申请日期
2011.12.02
申请人
STEPHENS, IV EDWARD F.;STRUEMPH FRANK L.;JUNGHANS JEREMY SCOTT;NORTHROP GRUMMAN SYSTEMS CORPORATION
发明人
STEPHENS, IV EDWARD F.;STRUEMPH FRANK L.;JUNGHANS JEREMY SCOTT