| 摘要 |
The semiconductor device includes a semiconductor substrate of a first type. A layer of semiconductor material of a second type is disposed on the semiconductor substrate. A first well and a second well are disposed on the layer. A third well is disposed on the layer between the first and second wells. A memory cell, including a first and a second plurality of transistors of the second type and a third plurality of transistors of the first type, is formed in the first, second, and third wells. The first plurality of transistors is formed in the first well, the second plurality of transistors is formed in the second well, and the third plurality of transistors is formed in the third well. The layer and the third well are configured to isolate the first and second wells from each other and from the semiconductor substrate. |
