发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region. |
申请公布号 |
US8519465(B2) |
申请公布日期 |
2013.08.27 |
申请号 |
US201213553386 |
申请日期 |
2012.07.19 |
申请人 |
KIM JUNG-HWAN;LEAM HUN-HYEOUNG;KIM TAE-HYUN;NAM SEOK-WOO;NAMKOONG HYUN;KIM YONG-SEOK;YU TEA-KWANG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JUNG-HWAN;LEAM HUN-HYEOUNG;KIM TAE-HYUN;NAM SEOK-WOO;NAMKOONG HYUN;KIM YONG-SEOK;YU TEA-KWANG |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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