发明名称 Semiconductor device and method of fabricating the same
摘要 A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.
申请公布号 US8519465(B2) 申请公布日期 2013.08.27
申请号 US201213553386 申请日期 2012.07.19
申请人 KIM JUNG-HWAN;LEAM HUN-HYEOUNG;KIM TAE-HYUN;NAM SEOK-WOO;NAMKOONG HYUN;KIM YONG-SEOK;YU TEA-KWANG;SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM JUNG-HWAN;LEAM HUN-HYEOUNG;KIM TAE-HYUN;NAM SEOK-WOO;NAMKOONG HYUN;KIM YONG-SEOK;YU TEA-KWANG
分类号 H01L29/76 主分类号 H01L29/76
代理机构 代理人
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