发明名称 |
Methods of forming and utilizing rutile-type titanium oxide |
摘要 |
Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.
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申请公布号 |
US8518486(B2) |
申请公布日期 |
2013.08.27 |
申请号 |
US20100778893 |
申请日期 |
2010.05.12 |
申请人 |
MIRIN NIK;HUANG TSAI-YU;BHAT VISHWANATH;CARLSON CHRIS;ANTONOV VASSIL;MICRON TECHNOLOGY, INC. |
发明人 |
MIRIN NIK;HUANG TSAI-YU;BHAT VISHWANATH;CARLSON CHRIS;ANTONOV VASSIL |
分类号 |
C23C16/00 |
主分类号 |
C23C16/00 |
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