发明名称 |
Nitride semiconductor element with N-face semiconductor crystal layer |
摘要 |
According to one embodiment, the semiconductor element includes a first semiconductor layer. The first semiconductor layer contains AlXGa1-XN. A top layer of the first semiconductor layer is terminated by nitrogen. The semiconductor element includes a second semiconductor layer containing non-doped or first conductivity-type AlYGa1-YN formed on the first semiconductor layer. The semiconductor element includes a third semiconductor layer containing AlZGa1-ZN formed on the second semiconductor layer. The semiconductor element includes a first major electrode connected to the third semiconductor layer. The semiconductor element includes a second major electrode connected to the third semiconductor layer. The semiconductor element includes a gate electrode provided on the third semiconductor layer between the first major electrode and the second major electrode.
|
申请公布号 |
US8519439(B2) |
申请公布日期 |
2013.08.27 |
申请号 |
US201113239229 |
申请日期 |
2011.09.21 |
申请人 |
SAITO WATARU;FUJIMOTO HIDETOSHI;KABUHIKI KAISHA TOSHIBA |
发明人 |
SAITO WATARU;FUJIMOTO HIDETOSHI |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|