| 摘要 |
A semiconductor memory device includes a memory comprising a plurality of banks; an input section configured to input an address of a bank address, a row address and a column address; and a command generating circuit configured to issue one of a read command, a write command, and a refresh command based on to an input signal. A control section selects a selection bank from the plurality of banks based on the bank address when the read command or the write command is issued from the command generating circuit, performs a read operation or a write operation on the selection bank based on the row address and the column address, and performs a refresh operation on the selection bank when the refresh command is issued immediately after the read command or the write command.
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