发明名称 |
Through silicon via and method of forming the same |
摘要 |
The present invention relates to a through silicon via (TSV). The TSV is disposed in a substrate including a via opening penetrating through a first surface and a second surface of the substrate. The TSV includes an insulation layer, a barrier layer, a buffer layer and a conductive electrode. The insulation layer is disposed on the surface of the via opening. The barrier layer is disposed on the surface of the insulation layer. The conductive electrode is disposed on the surface of the buffer layer and fills the via opening. The buffer layer further covers a surface of the conductive electrode at the side of the second surface. The present invention further discloses a method of forming the TSV. |
申请公布号 |
US8518823(B2) |
申请公布日期 |
2013.08.27 |
申请号 |
US201113335948 |
申请日期 |
2011.12.23 |
申请人 |
HUANG KUO-HSIUNG;CHIOU CHUN-MAO;CHEN HSIN-YU;TSAI YU-HAN;YANG CHING-LI;CHENG HOME-BEEN;UNITED MICROELECTRONICS CORP. |
发明人 |
HUANG KUO-HSIUNG;CHIOU CHUN-MAO;CHEN HSIN-YU;TSAI YU-HAN;YANG CHING-LI;CHENG HOME-BEEN |
分类号 |
H01L23/522;H01L21/768 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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