MEMORY CIRCUIT AND SEMICONDUCTOR DEVICE

摘要

PURPOSE: Memory circuit and semiconductor device are provided to reduce the power consumption by stopping supply of power voltage to a memory circuit in a period which writing or reading operation is not performed. CONSTITUTION: A first transistor (111) controls rewriting and reading of a first memory data (D1). A second transistor (112) controls rewriting and reading of a second memory data (D2). Potential of an input terminal is a first memory data in a first inverter (131). Potential of an input terminal is a second memory data in a second inverter (132). A third transistor and a fourth transistor control conduction of the first inverter and the second inverter. A fifth transistor controls rewriting and reading of first maintaining data of a first capacitive device (151). A sixth transistor controls rewriting and reading of second maintaining data of a second capacitive device (152).