| 摘要 |
PROBLEM TO BE SOLVED: To allow for suppressing deterioration in interface characteristics in an interface between a compound semiconductor layer such as GaAs and an insulating layer in a state in which mass production is possible without using a large device.SOLUTION: In a step S101, a semiconductor layer composed of a compound semiconductor containing Ga and As is formed. In a step S102, a surface of the semiconductor layer is irradiated with a particle beam. In this particle beam irradiation, the surface of the semiconductor layer is irradiated with radicals of the atom selected from nitrogen, antimony, and phosphorus. In a step S103, an insulating layer is formed on the semiconductor layer irradiated with a particle beam. |
