发明名称 GRAPHENE NANOELECTRONIC DEVICE FABRICATION
摘要 Methods for fabricating graphene nanoelectronic devices with semiconductor compatible processes, which allow wafer scale fabrication of graphene nanoelectronic devices, is provided. One method includes the steps of preparing a dispersion of functionalized graphene in a solvent; and applying a coating of said dispersion onto a substrate and evaporating the solvent to form a layer of functionalized graphene; and defunctionalizing the graphene to form a graphene layer on the substrate.
申请公布号 US2013217215(A1) 申请公布日期 2013.08.22
申请号 US201313847433 申请日期 2013.03.19
申请人 LOCKHEED MARTIN CORPORATION;LOCKHEED MARTIN CORPORATION 发明人 WARD JONATHAN W.;O'CONNOR MICHAEL J.
分类号 H01L21/02 主分类号 H01L21/02
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