发明名称 |
GRAPHENE NANOELECTRONIC DEVICE FABRICATION |
摘要 |
Methods for fabricating graphene nanoelectronic devices with semiconductor compatible processes, which allow wafer scale fabrication of graphene nanoelectronic devices, is provided. One method includes the steps of preparing a dispersion of functionalized graphene in a solvent; and applying a coating of said dispersion onto a substrate and evaporating the solvent to form a layer of functionalized graphene; and defunctionalizing the graphene to form a graphene layer on the substrate.
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申请公布号 |
US2013217215(A1) |
申请公布日期 |
2013.08.22 |
申请号 |
US201313847433 |
申请日期 |
2013.03.19 |
申请人 |
LOCKHEED MARTIN CORPORATION;LOCKHEED MARTIN CORPORATION |
发明人 |
WARD JONATHAN W.;O'CONNOR MICHAEL J. |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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