Electrostatic discharge protection circuit

摘要

The circuit includes transistors (T1,T2) with principal electrodes (E1,E3) connected to the control electrode (K1,K2) and the terminal (Su) of the circuit to be protected. A second principal electrode (E2,E4) is connected to the terminal (Su) of the circuit to be protected. The transistors are formed on a substrate (1) and connected to the terminal (Su). The are within the same casing or in separate casings spaced by a thick insulated zone. The dielectric layers (C1,C2) of the control electrodes and the gates of the protected circuit are made with the same material. A highly doped zone raises the threshold voltage of the two transistors.