发明名称 CONDUCTIVE LINE STRUCTURES AND METHODS OF FORMING THE SAME
摘要 Conductive line structures, and methods of forming the same, include first and second pattern structures, insulation layer patterns and an insulating interlayer. The first pattern structure includes a conductive line pattern and a hard mask stacked, and extends in a first direction. The second pattern structure includes a second conductive line pattern and another hard mask stacked, and at least a portion of the pattern structure extends in the first direction. The insulation layer patterns contact end portions of the pattern structures. The first pattern structure and an insulation layer pattern form a closed curve shape in plan view, and the second pattern structure and another insulation layer pattern form another closed curve shape in plan view. The insulating interlayer covers upper portions of the pattern structures and the insulation layer patterns, an air gap between the pattern structures, and another air gap between the insulation layer patterns.
申请公布号 US2013214413(A1) 申请公布日期 2013.08.22
申请号 US201313769493 申请日期 2013.02.18
申请人 SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE SOK-WON;LEE JOON-HEE;CHOI JUNG-DAL;JO SEONG-MIN
分类号 H01L23/52;H01L21/768 主分类号 H01L23/52
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