| 摘要 |
[Problem] To provide a spin implantation electrode structure and spin transport element using the same that can carry out highly efficient spin implantation in a semiconductor. [Solution] Aluminum oxide that includes a gamma phase is used for material constituting a tunnel barrier layer. In addition, a protective film is formed on the periphery of the tunnel barrier layer. Therefore, a spin implantation electrode structure with good quality having few defects inside the crystal and in the joining interface can be obtained, highly efficient spin implantation into semiconductors can be achieved, and a spin transport element with high output characteristics at room temperature can be provided. |
