POST-CMP REMOVAL USING COMPOSITIONS AND METHOD OF USE
摘要
<p>An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The amine-free composition preferably includes at least one oxidizing agent, at least one complexing agent, at least one basic compound, and water and has a pH in the range from about 2.5 to about 11.5. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.</p>
申请公布号
WO2013123317(A1)
申请公布日期
2013.08.22
申请号
WO2013US26326
申请日期
2013.02.15
申请人
ADVANCED TECHNOLOGY MATERIALS, INC.
发明人
LIU, JUN;BARNES, JEFFREY A.;COOPER, EMANUEL I.;SUN, LAISHENG;THOMAS, ELIZABETH;CHANG, JASON