| 摘要 |
An ESD circuit includes a plurality of MOS devices arranged in a stack, wherein each of the MOS devices comprises a source, a drain, and a gate; a voltage source inputting a supply voltage to the stack of MOS devices; a first plurality of resistors dividing the supply voltage to each source and each drain of the MOS devices in the stack; a second plurality of resistors biasing the supply voltage to each gate of the MOS devices in the stack; an inverter device operatively connected to the second plurality of resistors; a time lag circuit that turns the inverter device on and off; and a plurality of capacitors pulling the voltage to each gate of the MOS devices in the stack to the supply voltage upon the inverter device turning off.
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