发明名称 |
VERTICAL TRANSISTOR ACTUATION |
摘要 |
A method of actuating a semiconductor device includes providing a transistor including a substrate and a first electrically conductive material layer stack positioned on the substrate. The first electrically conductive material layer stack includes a reentrant profile. A second electrically conductive material layer includes first and second discrete portions in contact with first and second portions of a semiconductor material layer that conforms to the reentrant profile and is in contact with an electrically insulating material layer that conforms to the reentrant profile. A voltage is applied between the first discrete portion and the second discrete portion of the second electrically conductive material layer. A voltage is applied to the first electrically conductive material layer stack to modulate a resistance between the first discrete portion and the second discrete portion of the second electrically conductive material layer.
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申请公布号 |
US2013214845(A1) |
申请公布日期 |
2013.08.22 |
申请号 |
US201213401934 |
申请日期 |
2012.02.22 |
申请人 |
TUTT LEE W.;NELSON SHELBY F. |
发明人 |
TUTT LEE W.;NELSON SHELBY F. |
分类号 |
H03K17/56 |
主分类号 |
H03K17/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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