发明名称 |
SEMICONDUCTOR DEVICE COMPRISING CAPACITOR AND METHOD OF FABRICATING THE SAME |
摘要 |
A semiconductor device, including a memory cell region and a peripheral circuit region, comprises an insulating film, having an upper surface formed on a major surface of a semiconductor substrate to extend from a memory cell region to a peripheral circuit region thereof. A capacitor lower electrode is formed in the memory cell region to upwardly extend beyond the upper surface of the insulating film on the major surface of the semiconductor substrate. A capacitor upper electrode is formed on the capacitor lower electrode through a dielectric film, to extend onto the upper surface of the insulating film. The capacitor lower electrode includes a capacitor lower electrode part having a top surface and a bottom surface. The upper surface of the insulating film is located between the top and bottom surfaces of the capacitor lower electrode part.
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申请公布号 |
US2013214339(A1) |
申请公布日期 |
2013.08.22 |
申请号 |
US201313750928 |
申请日期 |
2013.01.25 |
申请人 |
RENESAS ELECTRONICS CORPORATION;RENESAS ELECTRONICS CORPORATION |
发明人 |
TANAKA YOSHINORI;SHIMIZU MASAHIRO;ARIMA HIDEAKI;MORITA SADAYUKI |
分类号 |
H01L27/06;H01L21/8242;H01L27/108 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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