发明名称 METHOD FOR MEASURING OVERLAY, MEASURING DEVICE, SCANNING ELECTRON MICROSCOPE, AND GUI
摘要 <p>A method for measuring overlay of a semiconductor device on which a circuit pattern is formed using a plurality of exposure steps, wherein the method for measuring overlay is characterized in being provided with an image-capturing step for capturing an image of a plurality of regions of the semiconductor device, a reference-image-setting step for setting a reference image based on a plurality of images captured in the image-capturing step, a difference-quantifying step for quantifying the difference between the reference image set in the reference-image-setting step and the plurality of images captured in the image-capturing step, and an overlay calculation step for calculating overlay on the basis of the difference quantified in the difference-quantifying step.</p>
申请公布号 WO2013121939(A1) 申请公布日期 2013.08.22
申请号 WO2013JP52657 申请日期 2013.02.06
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 HARADA, MINORU;NAKAGAKI, RYO;FUKUNAGA, FUMIHIKO;TAKAGI, YUJI
分类号 H01L21/66;H01L21/027 主分类号 H01L21/66
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