发明名称 |
METHOD FOR MEASURING OVERLAY, MEASURING DEVICE, SCANNING ELECTRON MICROSCOPE, AND GUI |
摘要 |
<p>A method for measuring overlay of a semiconductor device on which a circuit pattern is formed using a plurality of exposure steps, wherein the method for measuring overlay is characterized in being provided with an image-capturing step for capturing an image of a plurality of regions of the semiconductor device, a reference-image-setting step for setting a reference image based on a plurality of images captured in the image-capturing step, a difference-quantifying step for quantifying the difference between the reference image set in the reference-image-setting step and the plurality of images captured in the image-capturing step, and an overlay calculation step for calculating overlay on the basis of the difference quantified in the difference-quantifying step.</p> |
申请公布号 |
WO2013121939(A1) |
申请公布日期 |
2013.08.22 |
申请号 |
WO2013JP52657 |
申请日期 |
2013.02.06 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
HARADA, MINORU;NAKAGAKI, RYO;FUKUNAGA, FUMIHIKO;TAKAGI, YUJI |
分类号 |
H01L21/66;H01L21/027 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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